BU2527AW Datasheet, Equivalent, Cross Reference Search
Type Designator: BU2527AW
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7.5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 145 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO247 SOT429
BU2527AW Transistor Equivalent Substitute - Cross-Reference Search
BU2527AW Datasheet (PDF)
bu2527aw 1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL PARA
bu2527aw.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL PARA
bu2527aw.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU2527AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
bu2527af 2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS
bu2527a 1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BU2527A GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATASYMBOL P
bu2527ax 1.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS
bu2527af.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable foroperation up to 64 kHz.QUICK REFERENCE DATAS
bu2527ax.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AX DESCRIPTION With TO-3PML package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25)
bu2527af.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C
bu2527ax.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU2527AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
bu2527a.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU2527ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of largescreen colour television receivers up to 64 KHz.ABSOLUTE MAXIMUM RATINGS(T =25)
bu2527af.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc Silicon NPN Power Transistor BU2527AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .