BU2532AW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2532AW
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7.5 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 6
Paquete / Cubierta: TO247 SOT429
Búsqueda de reemplazo de transistor bipolar BU2532AW
BU2532AW Datasheet (PDF)
bu2532aw bu2532aw 1.pdf
Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE =
bu2532aw.pdf
isc Silicon NPN Power Transistor BU2532AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
bu2532al.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors up to 82 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage pea
bu2532al 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use inhorizontal deflection circuits of high resolution monitors up to 82 kHz.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage pea
bu2532al.pdf
isc Silicon NPN Power Transistor BU2532ALDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
