BU2532AW Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2532AW

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 125 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 7.5 V

Corriente del colector DC máxima (Ic): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 6

Encapsulados: TO247 SOT429

 Búsqueda de reemplazo de BU2532AW

- Selecciónⓘ de transistores por parámetros

 

BU2532AW datasheet

 ..1. Size:48K  philips
 bu2532aw bu2532aw 1.pdf pdf_icon

BU2532AW

Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE =

 ..2. Size:214K  inchange semiconductor
 bu2532aw.pdf pdf_icon

BU2532AW

isc Silicon NPN Power Transistor BU2532AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 7.1. Size:48K  philips
 bu2532al.pdf pdf_icon

BU2532AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage pea

 7.2. Size:48K  philips
 bu2532al 1.pdf pdf_icon

BU2532AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage pea

MOSTRAR MÁS

Otros transistores... BU2508AW, BU2508DW, BU2515AX, BU2520AW, BU2523AF, BU2523AX, BU2527AW, BU2532AL, BD333, BU2708AF, BU2708AX, BU406FI, BUT11AI, BUV48BFI, BUW11AW, BUW11W, BUW12AW