BU2532AW Specs and Replacement

Type Designator: BU2532AW

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 7.5 V

Maximum Collector Current |Ic max|: 16 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 6

Noise Figure, dB: -

Package: TO247 SOT429

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BU2532AW datasheet

 ..1. Size:48K  philips

bu2532aw bu2532aw 1.pdf pdf_icon

BU2532AW

Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE =... See More ⇒

 ..2. Size:214K  inchange semiconductor

bu2532aw.pdf pdf_icon

BU2532AW

isc Silicon NPN Power Transistor BU2532AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 7.1. Size:48K  philips

bu2532al.pdf pdf_icon

BU2532AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage pea... See More ⇒

 7.2. Size:48K  philips

bu2532al 1.pdf pdf_icon

BU2532AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2532AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors up to 82 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage pea... See More ⇒

Detailed specifications: BU2508AW, BU2508DW, BU2515AX, BU2520AW, BU2523AF, BU2523AX, BU2527AW, BU2532AL, BD333, BU2708AF, BU2708AX, BU406FI, BUT11AI, BUV48BFI, BUW11AW, BUW11W, BUW12AW

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