BU2708AF Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2708AF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 1700 V
Tensión colector-emisor (Vce): 825 V
Tensión emisor-base (Veb): 7.5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 3
Encapsulados: SOT199
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BU2708AF datasheet
bu2708af.pdf
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bu2708af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di
bu2708af.pdf
isc Silicon NPN Power Transistor BU2708AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 825V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
bu2708ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di
Otros transistores... BU2508DW, BU2515AX, BU2520AW, BU2523AF, BU2523AX, BU2527AW, BU2532AL, BU2532AW, BDT88, BU2708AX, BU406FI, BUT11AI, BUV48BFI, BUW11AW, BUW11W, BUW12AW, BUW12W
History: MJ7160 | MJ8500
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