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BU2708AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2708AF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 1700 V
   Tensión colector-emisor (Vce): 825 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 3
   Paquete / Cubierta: SOT199
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BU2708AF Datasheet (PDF)

 ..1. Size:191K  philips
bu2708af.pdf pdf_icon

BU2708AF

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 ..2. Size:59K  philips
bu2708af 1.pdf pdf_icon

BU2708AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 ..3. Size:211K  inchange semiconductor
bu2708af.pdf pdf_icon

BU2708AF

isc Silicon NPN Power Transistor BU2708AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.1. Size:60K  philips
bu2708ax 1.pdf pdf_icon

BU2708AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BSS56 | BDX83C | 2SB1204

 

 
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