BU2708AF Datasheet and Replacement
Type Designator: BU2708AF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 825 V
Maximum Emitter-Base Voltage |Veb|: 7.5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: -
Package: SOT199
BU2708AF Substitution
BU2708AF Datasheet (PDF)
bu2708af.pdf
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bu2708af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di
bu2708af.pdf
isc Silicon NPN Power Transistor BU2708AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
bu2708ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di
Datasheet: BU2508DW , BU2515AX , BU2520AW , BU2523AF , BU2523AX , BU2527AW , BU2532AL , BU2532AW , BC547 , BU2708AX , BU406FI , BUT11AI , BUV48BFI , BUW11AW , BUW11W , BUW12AW , BUW12W .
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