All Transistors. BU2708AF Datasheet

 

BU2708AF Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU2708AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 1700 V
   Maximum Collector-Emitter Voltage |Vce|: 825 V
   Maximum Emitter-Base Voltage |Veb|: 7.5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 3
   Noise Figure, dB: -
   Package: SOT199

 BU2708AF Transistor Equivalent Substitute - Cross-Reference Search

   

BU2708AF Datasheet (PDF)

 ..1. Size:191K  philips
bu2708af.pdf

BU2708AF
BU2708AF

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 ..2. Size:59K  philips
bu2708af 1.pdf

BU2708AF
BU2708AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 ..3. Size:211K  inchange semiconductor
bu2708af.pdf

BU2708AF
BU2708AF

isc Silicon NPN Power Transistor BU2708AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.1. Size:60K  philips
bu2708ax 1.pdf

BU2708AF
BU2708AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 7.2. Size:60K  philips
bu2708ax.pdf

BU2708AF
BU2708AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 7.3. Size:216K  inchange semiconductor
bu2708ax.pdf

BU2708AF
BU2708AF

isc Silicon NPN Power Transistor BU2708AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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