BU2708AF. Аналоги и основные параметры

Наименование производителя: BU2708AF

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 45 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1700 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 825 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7.5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 3

Корпус транзистора: SOT199

 Аналоги (замена) для BU2708AF

- подборⓘ биполярного транзистора по параметрам

 

BU2708AF даташит

 ..1. Size:191K  philips
 bu2708af.pdf pdf_icon

BU2708AF

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 ..2. Size:59K  philips
 bu2708af 1.pdf pdf_icon

BU2708AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di

 ..3. Size:211K  inchange semiconductor
 bu2708af.pdf pdf_icon

BU2708AF

isc Silicon NPN Power Transistor BU2708AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 825V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 7.1. Size:60K  philips
 bu2708ax 1.pdf pdf_icon

BU2708AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di

ПОКАЗАТЬ ЕЩЁ

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