BUW12W Todos los transistores

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag

isc Silicon NPN Power Transistor BUW12W DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL

DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12F; BUW12AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in

BUW1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 21" MONITORS 3 2 DESCRIPTION 1 The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective TO-247 high performance and uses a

isc Silicon NPN Power Transistor BUW12A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL

isc Silicon NPN Power Transistor BUW12F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL

isc Silicon NPN Power Transistor BUW12 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOLU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW12 BUW12A DESCRIPTION With TO-3PN package High voltage,fast speed Low collector saturation voltage APPLICATIONS Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

isc Silicon NPN Power Transistor BUW12AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSO

isc Silicon NPN Power Transistor BUW12AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSO