DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag

DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag

isc Silicon NPN Power Transistor BUW12WDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOL

DISCRETE SEMICONDUCTORSDATA SHEETBUW12F; BUW12AFSilicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12F; BUW12AFDESCRIPTIONHigh-voltage, high-speed, ook, halfpageglass-passivated NPN powertransistor in

BUW1215HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEEDAPPLICATIONS: HORIZONTAL DEFLECTION FOR HIGH-ENDCOLOUR TV AND 21" MONITORS32DESCRIPTION 1The BUW1215 is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-247high performance and uses a

isc Silicon NPN Power Transistor BUW12ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOL

isc Silicon NPN Power Transistor BUW12FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOL

isc Silicon NPN Power Transistor BUW12DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOLU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW12 BUW12A DESCRIPTION With TO-3PN package High voltage,fast speed Low collector saturation voltage APPLICATIONS Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

isc Silicon NPN Power Transistor BUW12AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSO

isc Silicon NPN Power Transistor BUW12AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSO