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BUW12W Specs and Replacement


   Type Designator: BUW12W
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO247 SOT429
 

 BUW12W Substitution

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BUW12W detailed specifications

 ..1. Size:79K  philips
buw12w buw12aw 1.pdf pdf_icon

BUW12W

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag... See More ⇒

 ..2. Size:79K  philips
buw12w buw12aw.pdf pdf_icon

BUW12W

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag... See More ⇒

 ..3. Size:213K  inchange semiconductor
buw12w.pdf pdf_icon

BUW12W

isc Silicon NPN Power Transistor BUW12W DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL... See More ⇒

 9.1. Size:81K  philips
buw12f 1.pdf pdf_icon

BUW12W

DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12F; BUW12AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in ... See More ⇒

Detailed specifications: BU2708AF , BU2708AX , BU406FI , BUT11AI , BUV48BFI , BUW11AW , BUW11W , BUW12AW , 2N5551 , BUX18A , BUX47AFI , KSD880W , KTC2200 , KTC2202 , KTD1945 , MJ10012T , MJE3055AT .

Keywords - BUW12W transistor specs

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