BUW12W Specs and Replacement
Type Designator: BUW12W
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125
W
Maximum Collector-Base Voltage |Vcb|: 850
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Collector Current |Ic max|: 8
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO247
SOT429
-
BJT ⓘ Cross-Reference Search
BUW12W detailed specifications
..1. Size:79K philips
buw12w buw12aw 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag... See More ⇒
..2. Size:79K philips
buw12w buw12aw.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag... See More ⇒
..3. Size:213K inchange semiconductor
buw12w.pdf 

isc Silicon NPN Power Transistor BUW12W DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL... See More ⇒
9.1. Size:81K philips
buw12f 1.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12F; BUW12AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in ... See More ⇒
9.2. Size:208K st
buw1215.pdf 

BUW1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 21" MONITORS 3 2 DESCRIPTION 1 The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective TO-247 high performance and uses a ... See More ⇒
9.3. Size:214K inchange semiconductor
buw12a.pdf 

isc Silicon NPN Power Transistor BUW12A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL... See More ⇒
9.4. Size:216K inchange semiconductor
buw12f.pdf 

isc Silicon NPN Power Transistor BUW12F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL... See More ⇒
9.5. Size:214K inchange semiconductor
buw12.pdf 

isc Silicon NPN Power Transistor BUW12 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOLU... See More ⇒
9.6. Size:120K inchange semiconductor
buw12 buw12a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW12 BUW12A DESCRIPTION With TO-3PN package High voltage,fast speed Low collector saturation voltage APPLICATIONS Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO... See More ⇒
9.7. Size:213K inchange semiconductor
buw12aw.pdf 

isc Silicon NPN Power Transistor BUW12AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSO... See More ⇒
9.8. Size:216K inchange semiconductor
buw12af.pdf 

isc Silicon NPN Power Transistor BUW12AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSO... See More ⇒
Detailed specifications: BU2708AF
, BU2708AX
, BU406FI
, BUT11AI
, BUV48BFI
, BUW11AW
, BUW11W
, BUW12AW
, 2N5551
, BUX18A
, BUX47AFI
, KSD880W
, KTC2200
, KTC2202
, KTD1945
, MJ10012T
, MJE3055AT
.
Keywords - BUW12W transistor specs
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