BUW12W Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW12W
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO247, SOT429
BUW12W Transistor Equivalent Substitute - Cross-Reference Search
BUW12W Datasheet (PDF)
0.1. buw12w buw12aw.pdf 
Size:79K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag
0.2. buw12w buw12aw 1.pdf Size:79K _philips
DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag
0.3. buw12w.pdf Size:213K _inchange_semiconductor
isc Silicon NPN Power Transistor BUW12W DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 400V(Min.) CEO(SUS) ·Low Collector Saturation Voltage- : V = 1.5V(Max.)@I = 6A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching industrial applications. ABSOL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
