MJE3055AT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor MJE3055ATDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 150-260@I = 1AFE CBandwidth Product-: f = 2MHz(Min)@I = 500 mAT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingapp

MJE3055A(NPN)RoHS MJE2955A(PNP)SEMICONDUCTOR RoHS Nell High Power Products Complementary Silicon power transistors(10A / 60V / 75W)FEATURES Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 AdcExcellent safe operating area 123TO-220AB DESCRIPTI

Order this documentMOTOROLAby MJE2955T/DSEMICONDUCTOR TECHNICAL DATAPNP*MJE2955TComplementary Silicon PlasticNPN*MJE3055TPower Transistors. . . designed for use in generalpurpose amplifier and switching applications.*Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE

MJE2955TMJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPNtransistor in Jedec TO-220 package. It isintended for power switching circuits andgeneral-purpose amplifiers. The complementary 32PNP type is MJE2955T.1TO-220INTERNAL SCHEMATIC DIA

MJE3055TGeneral Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MHz (Min.)TO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

MJE2955T (PNP)MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. http://onsemi.comFeatures10 AMPERE DC Current Gain Specified to 10 ACOMPLEMENTARY SILICON High Current Gain - Bandwidth Product -POWER TRANSISTORSfT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS= 500 mAd

MJE2955T (PNP),MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. www.onsemi.comFeatures10 AMPERE High Current Gain - Bandwidth ProductCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORS60 VOLTS - 75 WATTSMAXIMUM RATINGSRating

UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3MJE3055T-TA3-T MJE3055TL

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS MJE2955T PNPMJE3055T NPNTO-220Plastic PackageWith excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCEO Collector Emitter Voltage 60 VCollector Base Voltage VCB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L MJE3055 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER General Purpose and Switching ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitt

MJE3055(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR 3. EMITTER 3 21Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Curr

MJE3055Plastic-Encapsulate Power Transistors1231. BASE2. COLLECTORTO-2203. EMITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)ValueRating SymbolUnitCollector-Emitter Voltage V 60CEO VdcCollector-Base Voltage VCBO70 VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current (DC) IC(DC)10 AdcTotal Device Disspation T =25 CC 75WPDDerate above 25 C0.6W/ C-55

Spec. No. : HE6737HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HMJE3055TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMJE3055T is designed for general purpose of amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperatureStorage Temperature ..................................

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Complement to Type MJE2955T APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Complement to Type MJE2955 APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PAR