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MJE3055AT Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE3055AT

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO220

MJE3055AT Transistor Equivalent Substitute - Cross-Reference Search

 

MJE3055AT Datasheet (PDF)

1.1. mje3055at.pdf Size:213K _inchange_semiconductor

MJE3055AT
MJE3055AT

isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·High DC Current Gain- : h = 150-260@I = 1A FE C ·Bandwidth Product- : f = 2MHz(Min)@I = 500 mA T C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching app

2.1. mje3055a.pdf Size:165K _update

MJE3055AT
MJE3055AT

MJE3055A(NPN) RoHS MJE2955A(PNP) SEMICONDUCTOR RoHS Nell High Power Products Complementary Silicon power transistors (10A / 60V / 75W) FEATURES Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area 1 2 3 TO-220AB DESCRIPTI

 3.1. mje3055tg.pdf Size:135K _update

MJE3055AT
MJE3055AT

MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 10 AMPERE • DC Current Gain Specified to 10 A COMPLEMENTARY SILICON • High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAd

3.2. mje3055t mje2955t.pdf Size:129K _motorola

MJE3055AT
MJE3055AT

Order this document MOTOROLA by MJE2955T/D SEMICONDUCTOR TECHNICAL DATA PNP * MJE2955T Complementary Silicon Plastic NPN * MJE3055T Power Transistors . . . designed for use in generalpurpose amplifier and switching applications. *Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE IIIIIIIIIIIIIIIIIIIIIII fT = 2.0

 3.3. mje2955t mje3055t.pdf Size:59K _st

MJE3055AT
MJE3055AT

MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary 3 2 PNP type is MJE2955T. 1 TO-220 INTERNAL SCHEMATIC DIAGRAM

3.4. mje3055t.pdf Size:36K _fairchild_semi

MJE3055AT
MJE3055AT

MJE3055T General Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Vol

 3.5. mje2955t mje3055t.pdf Size:138K _onsemi

MJE3055AT
MJE3055AT

MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 10 AMPERE DC Current Gain Specified to 10 A COMPLEMENTARY SILICON High Current Gain - Bandwidth Product - POWER TRANSISTORS fT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS = 500 mAdc Pb

3.6. mje3055t.pdf Size:114K _utc

MJE3055AT
MJE3055AT

UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 MJE3055T-TA3-T MJE3055TL-TA

3.7. mje2955t mje3055t.pdf Size:273K _cdil

MJE3055AT
MJE3055AT

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS MJE2955T PNP MJE3055T NPN TO-220 Plastic Package With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector Emitter Voltage 60 V Collector Base Voltage VCBO 7

3.8. mje3055.pdf Size:226K _inchange_semiconductor

MJE3055AT
MJE3055AT

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETE

3.9. mje3055t.pdf Size:137K _inchange_semiconductor

MJE3055AT
MJE3055AT

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

3.10. mje3055.pdf Size:223K _lge

MJE3055AT
MJE3055AT

MJE3055(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -

3.11. mje3055.pdf Size:128K _wietron

MJE3055AT
MJE3055AT

MJE3055 Plastic-Encapsulate Power Transistors 1 2 3 1. BASE 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Value Rating Symbol Unit Collector-Emitter Voltage V 60 CEO Vdc Collector-Base Voltage VCBO 70 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current (DC) IC(DC) 10 Adc Total Device Disspation T =25 C C 75 W PD Derate above 25 C 0.6 W/ C -55 to

3.12. hmje3055t.pdf Size:41K _hsmc

MJE3055AT
MJE3055AT

Spec. No. : HE6737 HI-SINCERITY Issued Date : 1993.09.24 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE3055T is designed for general purpose of amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperature Storage Temperature .....................................

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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