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MN638S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MN638S

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 380 V

Tensión colector-emisor (Vce): 380 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 1500

Empaquetado / Estuche: TO220S

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MN638S Datasheet (PDF)

1.1. mn638s.pdf Size:30K _update_bjt

MN638S

Power Transistor MN638S Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220S (Ta=25ºC) (Ta=25ºC) Symbol Ratings Unit Symbol Test Conditions Ratings Unit I µA V 380±50 V CBO V =330V 10max CBO CB V 380±50 V I V =6V 20max mA 10.2±0.3 4.44±0.2 CEO EBO EB I =25mA V 6 V V C 330 to 430 V EBO (BR) CEO 1.3±0.2 I 6 (pulse 10) A h V =2V, I =3A 1500min C FE

1.2. mn638s.pdf Size:30K _no

MN638S

Power Transistor MN638S Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220S (Ta=25ºC) (Ta=25ºC) Symbol Ratings Unit Symbol Test Conditions Ratings Unit I µA V 380±50 V CBO V =330V 10max CBO CB V 380±50 V I V =6V 20max mA 10.2±0.3 4.44±0.2 CEO EBO EB I =25mA V 6 V V C 330 to 430 V EBO (BR) CEO 1.3±0.2 I 6 (pulse 10) A h V =2V, I =3A 1500min C FE

 1.3. mn638s.pdf Size:211K _inchange_semiconductor

MN638S
MN638S

isc Silicon NPN Darlington Power Transistor MN638S DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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