MN638S Datasheet. Specs and Replacement

Type Designator: MN638S  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 380 V

Maximum Collector-Emitter Voltage |Vce|: 380 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1500

Noise Figure, dB: -

Package: TO220S

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MN638S datasheet

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MN638S

Power Transistor MN638S Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220S (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit I A V 380 50 V CBO V =330V 10max CBO CB V 380 50 V I V =6V 20max mA 10.2 0.3 4.44 0.2 CEO EBO EB I =25mA V 6 V V C 330 to 430 V EBO (BR) CEO 1.3 0.2 I 6 (pulse 10) A h V =2V, I =3A 1500min C FE ... See More ⇒

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MN638S

isc Silicon NPN Power Transistor MN638S DESCRIPTION Collector Emitter Sustaining Voltage V 380V(Min) CEO Low Collector Saturation Voltage V =1.5V(Max.)@ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒

Detailed specifications: BUX47AFI, KSD880W, KTC2200, KTC2202, KTD1945, MJ10012T, MJE3055AT, MJE340T, 2SA1943, TIP2955T, TIP3055T, TL142, WT062, YZ21, 101NU71, 102NU71, 103NU71

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