YZ21 Datasheet, Equivalent, Cross Reference Search
Type Designator: YZ21
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Package: TO66
YZ21 Transistor Equivalent Substitute - Cross-Reference Search
YZ21 Datasheet (PDF)
0.1. fhd21f yz21f.pdf 
Size:120K _china
FHD21F(YZ21F) NPN PCM Tc=25 20 W ICM 5 A Tstg -55~150 V(BR) CEO ICE5mA 200 V V(BR) EBO IEB5mA 3 V ICEO VCE=20V 1.5 mA IC=2A VCEsat 3.0 V IB=4mA VCE=5V hFE 500 IC=2A 1. E 2. B 3. C TO-220 TO-
0.2. yz21d.pdf Size:199K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor YZ21DDESCRIPTIONHigh DC Current Gain-: h = 500(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)APPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL PARAMETER VALUETV Collector-Base Voltage 110 VCBOV Colle
0.3. yz21.pdf Size:206K _inchange_semiconductor
isc Silicon NPN Darlington Power Transistor YZ21DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
