All Transistors. YZ21 Datasheet

 

YZ21 Datasheet and Replacement


   Type Designator: YZ21
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO66
 

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YZ21 Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
 yz21.pdf pdf_icon

YZ21

isc Silicon NPN Darlington Power Transistor YZ21DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =

 0.1. Size:120K  china
 fhd21f yz21f.pdf pdf_icon

YZ21

FHD21F(YZ21F) NPN PCM Tc=25 20 W ICM 5 A Tstg -55~150 V(BR) CEO ICE5mA 200 V V(BR) EBO IEB5mA 3 V ICEO VCE=20V 1.5 mA IC=2A VCEsat 3.0 V IB=4mA VCE=5V hFE 500 IC=2A 1. E 2. B 3. C TO-220 TO-

 0.2. Size:199K  inchange semiconductor
 yz21d.pdf pdf_icon

YZ21

isc Silicon NPN Darlington Power Transistor YZ21DDESCRIPTIONHigh DC Current Gain-: h = 500(Min)@ I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 110V(Min)CEO(SUS)APPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL PARAMETER VALUETV Collector-Base Voltage 110 VCBOV Colle

Datasheet: MJ10012T , MJE3055AT , MJE340T , MN638S , TIP2955T , TIP3055T , TL142 , WT062 , 13009 , 101NU71 , 102NU71 , 103NU71 , 104NU71 , 2T951A , 2T951B , 2T951V , D71F2T1 .

Keywords - YZ21 transistor datasheet

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