YZ21 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: YZ21

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 2000

Encapsulados: TO66

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YZ21 datasheet

 ..1. Size:206K  inchange semiconductor
 yz21.pdf pdf_icon

YZ21

isc Silicon NPN Darlington Power Transistor YZ21 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =

 0.1. Size:120K  china
 fhd21f yz21f.pdf pdf_icon

YZ21

FHD21F(YZ21F) NPN PCM Tc=25 20 W ICM 5 A Tstg -55 150 V(BR) CEO ICE 5mA 200 V V(BR) EBO IEB 5mA 3 V ICEO VCE=20V 1.5 mA IC=2A VCEsat 3.0 V IB=4mA VCE=5V hFE 500 IC=2A 1. E 2. B 3. C TO-220 TO-

 0.2. Size:199K  inchange semiconductor
 yz21d.pdf pdf_icon

YZ21

isc Silicon NPN Darlington Power Transistor YZ21D DESCRIPTION High DC Current Gain- h = 500(Min)@ I = 2A FE C Collector-Emitter Sustaining Voltage- V = 110V(Min) CEO(SUS) APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 110 V CBO V Colle

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