TL142 Specs and Replacement
Type Designator: TL142
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 500
Noise Figure, dB: -
Package: TO3P
TL142 Substitution
TL142 datasheet
tl142.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TL142 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency... See More ⇒
utl1426.pdf
UNISONIC TECHNOLOGIES CO., LTD UTL1426 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION SOP-8 The UTL1426 uses UTC s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒
Detailed specifications: KTC2202 , KTD1945 , MJ10012T , MJE3055AT , MJE340T , MN638S , TIP2955T , TIP3055T , 13007 , WT062 , YZ21 , 101NU71 , 102NU71 , 103NU71 , 104NU71 , 2T951A , 2T951B .
History: 3DD6E
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History: 3DD6E
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