TL142 Datasheet. Specs and Replacement

Type Designator: TL142  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO3P

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TL142 datasheet

 ..1. Size:195K  inchange semiconductor

 tl142.pdf pdf_icon

TL142

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor TL142 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency... See More ⇒

 0.1. Size:208K  utc

 utl1426.pdf pdf_icon

TL142

UNISONIC TECHNOLOGIES CO., LTD UTL1426 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION SOP-8 The UTL1426 uses UTC s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)... See More ⇒

Detailed specifications: KTC2202, KTD1945, MJ10012T, MJE3055AT, MJE340T, MN638S, TIP2955T, TIP3055T, 2SD718, WT062, YZ21, 101NU71, 102NU71, 103NU71, 104NU71, 2T951A, 2T951B

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