RN2130FV Todos los transistores

 

RN2130FV . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN2130FV
   Código: Y2
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: 2-1L1A
 

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RN2130FV Datasheet (PDF)

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RN2130FV

RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Built-in bias resistors 1.20.05 Simplified circuit design 0.80.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT

 8.1. Size:153K  toshiba
 rn2130mfv.pdf pdf_icon

RN2130FV

RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit : mmInverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.20.05 With built-in bias resistors 0.80.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1

 9.1. Size:165K  toshiba
 rn2131mfv rn2132mfv.pdf pdf_icon

RN2130FV

RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit : mmSwitching Applications Inverter Circuit Applications Interface Circuit Applications 1.20.05 Driver Circuit Applications 0.80.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl

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