RN2130FV Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN2130FV  📄📄 

Código: Y2

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: 2-1L1A

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RN2130FV datasheet

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 rn2130fv.pdf pdf_icon

RN2130FV

RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors 1.2 0.05 Simplified circuit design 0.8 0.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT

 8.1. Size:153K  toshiba
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RN2130FV

RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.8 0.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1

 9.1. Size:165K  toshiba
 rn2131mfv rn2132mfv.pdf pdf_icon

RN2130FV

RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit mm Switching Applications Inverter Circuit Applications Interface Circuit Applications 1.2 0.05 Driver Circuit Applications 0.8 0.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl

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