RN2130FV PDF Specs and Replacement
Type Designator: RN2130FV
SMD Transistor Code: Y2
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: 2-1L1A
RN2130FV Substitution
RN2130FV PDF detailed specifications
rn2130fv.pdf
RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Built-in bias resistors 1.2 0.05 Simplified circuit design 0.8 0.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT... See More ⇒
rn2130mfv.pdf
RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit mm Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.8 0.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1... See More ⇒
rn2131mfv rn2132mfv.pdf
RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit mm Switching Applications Inverter Circuit Applications Interface Circuit Applications 1.2 0.05 Driver Circuit Applications 0.8 0.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl... See More ⇒
Detailed specifications: 101NU71 , 102NU71 , 103NU71 , 104NU71 , 2T951A , 2T951B , 2T951V , D71F2T1 , 2SD718 , SAP16N , SBT92 , TIP540 , AT41586 , C3198 , HTL194 , ST2001HI , SFT244 .
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