RN2130FV Datasheet, Equivalent, Cross Reference Search
Type Designator: RN2130FV
SMD Transistor Code: Y2
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: 2-1L1A
RN2130FV Transistor Equivalent Substitute - Cross-Reference Search
RN2130FV Datasheet (PDF)
rn2130fv.pdf
RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Built-in bias resistors 1.20.05 Simplified circuit design 0.80.05 Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1 2 3 Equivalent Circuit 1.BASE VESM 2.EMIT
rn2130mfv.pdf
RN2130MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2130MFV Switching Applications Unit : mmInverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.20.05 With built-in bias resistors 0.80.05 Simplify circuit design Reduce a quantity of parts and manufacturing process 1
rn2131mfv rn2132mfv.pdf
RN2131MFV,RN2132MFV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2131MFV,RN2132MFV Unit : mmSwitching Applications Inverter Circuit Applications Interface Circuit Applications 1.20.05 Driver Circuit Applications 0.80.05 With built-in bias resistors 1 Simplify circuit design 2 3 Reduce a quantity of parts and manufacturing process Compl
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