C3198 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

C3198 NPN Epitaxial Silicon Transistor TO-92 Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 5 VCollector Current IC 150 mAmW Collector Dissipation PC 625o1. Emitter 2.

KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70~140 120~240 200~400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3198CC8050TO-92Plastic PackageBCEGeneral Purpose and Switching ApplicationABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 50 VVEBOEmitter Base Voltage 5

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 KTC3198 TRANSISTOR (NPN)1.EMITTERFEATURES 2.COLLECTOR General Purpose Switching Application3.BASE Complementary to KTA1266. Equivalent Circuit C 3198

SEMICONDUCTOR KTC3198TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.FEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).Low Noise : NF=1dB(Typ.). at f=1kHz.Complementary to KTA1266. MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base

SEMICONDUCTOR KTC3198ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTA1266A. C 3.70 MAXDD 0.45E

SEMICONDUCTOR KTC3198LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise : NF=0.2dB(Typ.). f=(1kHz).A 4.70 MAXEKB 4.80 MAXComplementary to KTA1266L. (O,Y,GR class) GC 3.70 MAXDD 0.45E 1.00F 1.2

KTC3198 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h ,, KTA1266 FEExcellent hFE linearity, low noise, complementary pair with KTA1266. / Applications General amplifier

SEMICONDUCTORFTC3198TECHNICAL DATATRANSISTOR (NPN) B CFEATURES General Purpose Switching Application Complementary to FTA1266. DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) E 1.00F 1.27G 0.85Symbo Parameter Value UnitH 0.45_HVCBO Collector-Base Voltage 60 V J 14.00 + 0.50L 2.30F

DIP Type TransistorsNPN TransistorsKTC3198Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise0.60 Max Complementary to KTA12660.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5