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C3198 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: C3198

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80 MHz

Ganancia de corriente contínua (hfe): 25

Empaquetado / Estuche: TO92

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C3198 Datasheet (PDF)

0.1. c3198.pdf Size:57K _1

C3198

C3198 NPN Epitaxial Silicon Transistor TO-92 Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 5 VCollector Current IC 150 mAmW Collector Dissipation PC 625o1. Emitter 2.

0.2. ktc3198.pdf Size:244K _secos

C3198
C3198

KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70~140 120~240 200~400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.

 0.3. csc3198.pdf Size:253K _cdil

C3198
C3198

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3198CC8050TO-92Plastic PackageBCEGeneral Purpose and Switching ApplicationABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Emitter Voltage 50 VVEBOEmitter Base Voltage 5

0.4. ktc3198a.pdf Size:66K _kec

C3198
C3198

SEMICONDUCTOR KTC3198ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSA 4.70 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. EKB 4.80 MAXGComplementary to KTA1266A. C 3.70 MAXDD 0.45E

 0.5. ktc3198.pdf Size:432K _kec

C3198
C3198

SEMICONDUCTOR KTC3198TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mAN DIM MILLIMETERS: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).A 4.70 MAXEKB 4.80 MAXLow Noise : NF=1dB(Typ.). at f=1kHz. GC 3.70 MAXDComplementary to KTA1266. D 0.45E 1.00F

0.6. ktc3198l.pdf Size:29K _kec

C3198

SEMICONDUCTOR KTC3198LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION.B CFEATURES Excellent hFE Linearity: hFE(2)=100(Typ.) at VCE=6V, IC=150mA: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).N DIM MILLIMETERSLow Noise : NF=0.2dB(Typ.). f=(1kHz).A 4.70 MAXEKB 4.80 MAXComplementary to KTA1266L. (O,Y,GR class) GC 3.70 MAXDD 0.45E 1.00F 1.2

0.7. 2sc3198l.pdf Size:54K _kec

C3198

0.8. ftc3198.pdf Size:184K _first_silicon

C3198
C3198

SEMICONDUCTORFTC3198TECHNICAL DATATRANSISTOR (NPN) B CFEATURES General Purpose Switching Application Complementary to FTA1266. DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXMAXIMUM RATINGS (Ta=25 unless otherwise noted) E 1.00F 1.27G 0.85Symbo Parameter Value UnitH 0.45_HVCBO Collector-Base Voltage 60 V J 14.00 + 0.50L 2.30F

0.9. ktc3198.pdf Size:1736K _kexin

C3198
C3198

DIP Type TransistorsNPN TransistorsKTC3198Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise0.60 Max Complementary to KTA12660.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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