C3198 datasheet и подбор замены

 ..1. Size:57K  1
 c3198.pdf 

C3198 NPN Epitaxial Silicon Transistor TO-92 Features Collector-Emitter Voltage VCEO=50V Collector Dissipation PC(max)=625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA mW Collector Dissipation PC 625 o 1. Emitter 2.

 0.1. Size:244K  secos
 ktc3198.pdf 

KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70 140 120 240 200 400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.

 0.2. Size:253K  cdil
 csc3198.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3198 CC8050 TO-92 Plastic Package B C E General Purpose and Switching Application ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 50 V VEBO Emitter Base Voltage 5

 0.3. Size:426K  jiangsu
 ktc3198.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 KTC3198 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching Application 3.BASE Complementary to KTA1266. Equivalent Circuit C 3198

 0.4. Size:794K  kec
 ktc3198.pdf 

SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise NF=1dB(Typ.). at f=1kHz. Complementary to KTA1266. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base

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 2sc3198l.pdf 

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 ktc3198a.pdf 

SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS A 4.70 MAX Low Noise NF=1dB(Typ.). at f=1kHz. E K B 4.80 MAX G Complementary to KTA1266A. C 3.70 MAX D D 0.45 E

 0.7. Size:29K  kec
 ktc3198l.pdf 

SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise NF=0.2dB(Typ.). f=(1kHz). A 4.70 MAX E K B 4.80 MAX Complementary to KTA1266L. (O,Y,GR class) G C 3.70 MAX D D 0.45 E 1.00 F 1.2

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 ktc3198.pdf 

KTC3198 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h , , KTA1266 FE Excellent hFE linearity, low noise, complementary pair with KTA1266. / Applications General amplifier

 0.9. Size:184K  first silicon
 ftc3198.pdf 

SEMICONDUCTOR FTC3198 TECHNICAL DATA TRANSISTOR (NPN) B C FEATURES General Purpose Switching Application Complementary to FTA1266. DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 1.00 F 1.27 G 0.85 Symbo Parameter Value Unit H 0.45 _ H VCBO Collector-Base Voltage 60 V J 14.00 + 0.50 L 2.30 F

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 ktc3198.pdf 

DIP Type Transistors NPN Transistors KTC3198 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Low Noise 0.60 Max Complementary to KTA1266 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5