C3198 Datasheet, Equivalent, Cross Reference Search
Type Designator: C3198
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO92
C3198 Transistor Equivalent Substitute - Cross-Reference Search
C3198 Datasheet (PDF)
0.1. c3198.pdf 
Size:57K _1
C3198 NPN Epitaxial Silicon Transistor TO-92 Features Collector-Emitter Voltage: VCEO=50V Collector Dissipation: PC(max)=625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA mW Collector Dissipation PC 625 o 1. Emitter 2.
0.2. ktc3198.pdf Size:244K _secos
KTC3198 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92 V(BR)CBO=60V CLASSIFICATION OF hFE (1) Product-Rank KTC3198-O KTC3198-Y KTC3198-GR Range 70~140 120~240 200~400 1Emitter Collector 2Base 3 3Collector Millimeter Millimeter 2 REF. REF.
0.3. csc3198.pdf Size:253K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3198 CC8050 TO-92 Plastic Package B C E General Purpose and Switching Application ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 50 V VEBO Emitter Base Voltage 5
0.4. ktc3198a.pdf Size:66K _kec
SEMICONDUCTOR KTC3198A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES ·Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS A 4.70 MAX ·Low Noise : NF=1dB(Typ.). at f=1kHz. E K B 4.80 MAX G ·Complementary to KTA1266A. C 3.70 MAX D D 0.45 E
0.5. ktc3198.pdf Size:432K _kec
SEMICONDUCTOR KTC3198 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA N DIM MILLIMETERS : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). A 4.70 MAX E K B 4.80 MAX Low Noise : NF=1dB(Typ.). at f=1kHz. G C 3.70 MAX D Complementary to KTA1266. D 0.45 E 1.00 F
0.6. ktc3198l.pdf Size:29K _kec
SEMICONDUCTOR KTC3198L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. B C FEATURES Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N DIM MILLIMETERS Low Noise : NF=0.2dB(Typ.). f=(1kHz). A 4.70 MAX E K B 4.80 MAX Complementary to KTA1266L. (O,Y,GR class) G C 3.70 MAX D D 0.45 E 1.00 F 1.2
0.7. 2sc3198l.pdf Size:54K _kec
0.8. ftc3198.pdf Size:184K _first_silicon
SEMICONDUCTOR FTC3198 TECHNICAL DATA TRANSISTOR (NPN) B C FEATURES General Purpose Switching Application Complementary to FTA1266. DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) E 1.00 F 1.27 G 0.85 Symbo Parameter Value Unit H 0.45 _ H VCBO Collector-Base Voltage 60 V J 14.00 + 0.50 L 2.30 F
0.9. ktc3198.pdf Size:1736K _kexin
DIP Type Transistors NPN Transistors KTC3198 Unit:mm TO-92 4.8 ± 0.3 3.8 ± 0.3 ■ Features ● Excellent hFE Linearity ● Low Noise 0.60 Max ● Complementary to KTA1266 0.45 ± 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 5
Datasheet: KT342AM , KT342B , KT342BM , KT342DM , KT342G , KT342GM , KT342V , KT342VM , 2N60 , KT343B , KT343V , KT345A , KT345B , KT345V , KT347A , KT347B , KT347V .
