BFP196W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP196W
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.7 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8500 MHz
Capacitancia de salida (Cc): 0.6 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT-343R
Búsqueda de reemplazo de transistor bipolar BFP196W
BFP196W Datasheet (PDF)
bfp196w.pdf
BFP 196WNPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configura
bfp196w.pdf
BFP196WLow Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband3 amplifiers in antenna and telecommunications24 systems up to 1.5 GHz at collector currents from1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qual
bfp196w.pdf
isc Silicon NPN RF Transistor BFP196WDESCRIPTIONLow Noise FigureNF = 1.3 dB TYP.@V = 6 V, I = 5 mA, f = 1GHzCE CHigh GainS 2 = 18dB TYP.21@V = 6 V,I = 30 mA,f = 1GHzCE CMinimum Lot-to-Lot variations for robustdevice performance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gainamplifiers and linear broadband amplifiers.ABSOLU
bfp196.pdf
BFP 196NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configurat
bfp196.pdf
BFP196Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband3 amplifiers in antenna and telecommunications24 systems up to 1.5 GHz at collector currents from1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101
bfp193w.pdf
BFP 193WNPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 193W RCs Q62702-F1577 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Values Uni
bfp194.pdf
BFP 194PNP Silicon RF Transistor For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mAESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 194 RKs Q62702-F1347 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParamete
bfp193.pdf
BFP 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 193 RCs Q62702-F1282 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values Unit
bfp193w.pdf
BFP193WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz3 For linear broadband amplifiers241 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration
bfp193.pdf
BFP193Low Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz3 For linear broadband amplifiers 24 fT = 8 GHz, NFmin = 1 dB at 900 MHz 1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configuration Pa
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