BFP196W Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP196W

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.7 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 2 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8500 MHz

Capacitancia de salida (Cc): 0.6 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: SOT-343R

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BFP196W datasheet

 ..1. Size:60K  siemens
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BFP196W

BFP 196W NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configura

 ..2. Size:546K  infineon
bfp196w.pdf pdf_icon

BFP196W

BFP196W Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qual

 ..3. Size:220K  inchange semiconductor
bfp196w.pdf pdf_icon

BFP196W

isc Silicon NPN RF Transistor BFP196W DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 6 V, I = 5 mA, f = 1GHz CE C High Gain S 2 = 18dB TYP. 21 @V = 6 V,I = 30 mA,f = 1GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLU

 8.1. Size:60K  siemens
bfp196.pdf pdf_icon

BFP196W

BFP 196 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configurat

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