BFP196W Specs and Replacement

Type Designator: BFP196W

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8500 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT-343R

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BFP196W datasheet

 ..1. Size:60K  siemens

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BFP196W

BFP 196W NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configura... See More ⇒

 ..2. Size:546K  infineon

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BFP196W

BFP196W Low Noise Silicon Bipolar RF Transistor For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qual... See More ⇒

 ..3. Size:220K  inchange semiconductor

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BFP196W

isc Silicon NPN RF Transistor BFP196W DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 6 V, I = 5 mA, f = 1GHz CE C High Gain S 2 = 18dB TYP. 21 @V = 6 V,I = 30 mA,f = 1GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLU... See More ⇒

 8.1. Size:60K  siemens

bfp196.pdf pdf_icon

BFP196W

BFP 196 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configurat... See More ⇒

Detailed specifications: 2T837A, 3CD3C, 3DA27C, 3DA608, 3DA98A, 3DA98B, 3DD164F, BFG540-X, 2SD2499, BFR182TW, BU506A, BU941ZL, BUV26G, DK151G, DS15, J6920, KSA940TU

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