DS15 Todos los transistores

isc Silicon NPN Power Transistors DS15 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Fast Switching Speeds Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converte

BDS13 BDS13SMD BDS13SMD05 BDS14 BDS14SMD BDS14SMD05 BDS15 BDS15SMD BDS15SMD05 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 4.6 10.6 0.8 FEATURES 3.6 HERMETIC METAL OR CERAMIC PACKAGES Dia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME

BDS13 BDS13SMD BDS13SMD05 BDS14 BDS14SMD BDS14SMD05 BDS15 BDS15SMD BDS15SMD05 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 4.6 10.6 0.8 FEATURES 3.6 HERMETIC METAL OR CERAMIC PACKAGES Dia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME

MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0m General Description Features The MDS1526 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1526 is suitable for DC/DC converter and

MDS1528 Single N-channel Trench MOSFET 30V, 11.9A, 18.8m General Description Features The MDS1528 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1528 is suitable for DC/DC converter and

MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0m General Description Features The MDS1521 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 28.2A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1521 is suitable for DC/DC converter and

MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1m General Description Features The MDS1525 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and

MDS1524 Single N-channel Trench MOSFET 30V, 19.3A, 8.1m General Description Features The MDS1524 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 19.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1524 is suitable for DC/DC converter and

MDS1527 Single N-channel Trench MOSFET 30V, 13.1A, 15.9m General Description Features The MDS1527 uses advanced MagnaChip s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 13.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1527 is suitable for DC/DC converter and