isc Silicon NPN Power Transistors DS15DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOFast Switching SpeedsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose power amplification andswitching such as output or driver stages in applicationssuch as switching regulators,converte

BDS13 BDS13SMD BDS13SMD05BDS14 BDS14SMD BDS14SMD05BDS15 BDS15SMD BDS15SMD05SILICON PNP EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES4.610.60.8FEATURES3.6 HERMETIC METAL OR CERAMIC PACKAGESDia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME

BDS13 BDS13SMD BDS13SMD05BDS14 BDS14SMD BDS14SMD05BDS15 BDS15SMD BDS15SMD05SILICON PNP EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES4.610.60.8FEATURES3.6 HERMETIC METAL OR CERAMIC PACKAGESDia. HIGH RELIABILITY MILITARY AND SPACE OPTIONS1 2 3 SCREENING TO CECC LEVELS FULLY ISOLATED (ME

MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0mGeneral Description Features The MDS1526 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1526 is suitable for DC/DC converter and

MDS1528 Single N-channel Trench MOSFET 30V, 11.9A, 18.8mGeneral Description Features The MDS1528 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 11.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1528 is suitable for DC/DC converter and

MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0mGeneral Description Features The MDS1521 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 28.2A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1521 is suitable for DC/DC converter and

MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1mGeneral Description Features The MDS1525 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and

MDS1524 Single N-channel Trench MOSFET 30V, 19.3A, 8.1mGeneral Description Features The MDS1524 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 19.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1524 is suitable for DC/DC converter and

MDS1527 Single N-channel Trench MOSFET 30V, 13.1A, 15.9mGeneral Description Features The MDS1527 uses advanced MagnaChips MOSFET V = 30V DSTechnology, which provides high performance in on-state ID = 13.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1527 is suitable for DC/DC converter and