All Transistors. DS15 Datasheet

 

DS15 Datasheet, Equivalent, Cross Reference Search

Type Designator: DS15

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO-220

DS15 Transistor Equivalent Substitute - Cross-Reference Search

 

DS15 Datasheet (PDF)

0.1. bds15smd.pdf Size:38K _semelab

DS15
DS15

BDS13 BDS13SMD BDS13SMD05 BDS14 BDS14SMD BDS14SMD05 BDS15 BDS15SMD BDS15SMD05 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 4.6 10.6 0.8 FEATURES 3.6 • HERMETIC METAL OR CERAMIC PACKAGES Dia. • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS 1 2 3 • SCREENING TO CECC LEVELS • FULLY ISOLATED (ME

0.2. bds15smd05.pdf Size:38K _semelab

DS15
DS15

BDS13 BDS13SMD BDS13SMD05 BDS14 BDS14SMD BDS14SMD05 BDS15 BDS15SMD BDS15SMD05 SILICON PNP EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 4.6 10.6 0.8 FEATURES 3.6 • HERMETIC METAL OR CERAMIC PACKAGES Dia. • HIGH RELIABILITY • MILITARY AND SPACE OPTIONS 1 2 3 • SCREENING TO CECC LEVELS • FULLY ISOLATED (ME

 0.3. mds1528urh.pdf Size:669K _magnachip

DS15
DS15

 MDS1528 Single N-channel Trench MOSFET 30V, 11.9A, 18.8mΩ General Description Features The MDS1528 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 11.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1528 is suitable for DC/DC converter and < 18.8mΩ @V = 10V GS general purpose app

0.4. mds1525urh.pdf Size:665K _magnachip

DS15
DS15

 MDS1525 Single N-channel Trench MOSFET 30V, 16.9A, 10.1mΩ General Description Features The MDS1525 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.9A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1525 is suitable for DC/DC converter and < 10.1mΩ @V = 10V GS general purpose app

 0.5. mds1524urh.pdf Size:661K _magnachip

DS15
DS15

 MDS1524 Single N-channel Trench MOSFET 30V, 19.3A, 8.1mΩ General Description Features The MDS1524 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 19.3A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1524 is suitable for DC/DC converter and < 8.1mΩ @V = 10V GS general purpose appli

0.6. mds1521urh.pdf Size:676K _magnachip

DS15
DS15

 MDS1521 Single N-channel Trench MOSFET 30V, 28.2A, 4.0mΩ General Description Features The MDS1521 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 28.2A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1521 is suitable for DC/DC converter and < 4.0mΩ @V = 10V GS general purpose appli

0.7. mds1526urh.pdf Size:664K _magnachip

DS15
DS15

 MDS1526 Single N-channel Trench MOSFET 30V, 16.1A, 11.0mΩ General Description Features The MDS1526 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1526 is suitable for DC/DC converter and < 11.0mΩ @V = 10V GS general purpose app

0.8. mds1527urh.pdf Size:676K _magnachip

DS15
DS15

 MDS1527 Single N-channel Trench MOSFET 30V, 13.1A, 15.9mΩ General Description Features The MDS1527 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 13.1A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDS1527 is suitable for DC/DC converter and < 15.9mΩ @V = 10V GS general purpose app

0.9. ds15.pdf Size:223K _inchange_semiconductor

DS15
DS15

isc Silicon NPN Power Transistors DS15 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 100V(Min) (BR)CEO ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converte

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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