TIP35AB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor TIP35AB DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching applications. TIP35C* 25 A Collector Current PNP Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V TIP36A Excellent DC Gain hFE = 40 Typ @ 15 A High Current Gain Bandw

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

isc Silicon NPN Power Transistor TIP35AF DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

isc Silicon NPN Power Transistor TIP35AT DESCRIPTION DC Current Gain- h = 25(Min)@I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a