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TIP35AB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP35AB

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO-263

Búsqueda de reemplazo de transistor bipolar TIP35AB

 

TIP35AB Datasheet (PDF)

1.1. tip35ab.pdf Size:212K _inchange_semiconductor

TIP35AB
TIP35AB

isc Silicon NPN Power Transistor TIP35AB DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a

4.1. tip35are.pdf Size:157K _motorola

TIP35AB
TIP35AB

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching

4.2. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi

TIP35AB
TIP35AB

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125

 4.3. tip35 tip35a tip35b tip35c.pdf Size:160K _inchange_semiconductor

TIP35AB
TIP35AB

Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION ·With TO-3PN package ·Complement to type TIP36/36A/36B/36C ·DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

4.4. tip35at.pdf Size:213K _inchange_semiconductor

TIP35AB
TIP35AB

isc Silicon NPN Power Transistor TIP35AT DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a

 4.5. tip35af.pdf Size:222K _inchange_semiconductor

TIP35AB
TIP35AB

isc Silicon NPN Power Transistor TIP35AF DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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