TIP35AB Datasheet, Equivalent, Cross Reference Search
Type Designator: TIP35AB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO-263
TIP35AB Transistor Equivalent Substitute - Cross-Reference Search
TIP35AB Datasheet (PDF)
0.1. tip35ab.pdf 
Size:212K _inchange_semiconductor
isc Silicon NPN Power Transistor TIP35AB DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
8.1. tip35are.pdf Size:157K _motorola
O r d e r t h i s d o c u m e n t M O T O R O L A b y T I P 3 5 A / D S E M I C O N D U C T O R T E C H N I C A L D A T A N P N T I P 3 5 A C o m p l e m e n t a r y S i l i c o n T I P 3 5 B * H i g h - P o w e r T r a n s i s t o r s . . . f o r g e n e r a l p u r p o s e p o w e r a m p l i f i e r a n d s w i t c h i n g
8.2. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125
8.3. tip35 tip35a tip35b tip35c.pdf Size:160K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION ·With TO-3PN package ·Complement to type TIP36/36A/36B/36C ·DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
8.4. tip35at.pdf Size:213K _inchange_semiconductor
isc Silicon NPN Power Transistor TIP35AT DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
8.5. tip35af.pdf Size:222K _inchange_semiconductor
isc Silicon NPN Power Transistor TIP35AF DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = 1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
