Справочник транзисторов. TIP35AB

 

Биполярный транзистор TIP35AB - описание производителя. Основные параметры. Даташиты.

Наименование производителя: TIP35AB

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 25 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора: TO-263

Аналоги (замена) для TIP35AB

 

 

TIP35AB Datasheet (PDF)

4.1. tip35are.pdf Size:157K _motorola

TIP35AB
TIP35AB

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching

4.2. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi

TIP35AB
TIP35AB

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125

 5.1. tip35rev.pdf Size:169K _motorola

TIP35AB
TIP35AB

Order this document MOTOROLA by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Complementary Silicon TIP35B* High-Power Transistors . . . for general purpose power amplifier and switching

5.2. tip35cp tip36cp.pdf Size:196K _st

TIP35AB
TIP35AB

TIP35CP TIP36CP Complementary power transistors . Features ■ Low collector-emitter saturation voltage ■ Complementary NPN-PNP transistors Applications ■ General purpose 3 ■ Audio amplifier 2 1 TO-3P Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show excepti

 5.3. tip35cw tip36cw.pdf Size:190K _st

TIP35AB
TIP35AB

TIP35CW TIP36CW Complementary power transistors . Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 ■ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show exc

5.4. tip35.pdf Size:39K _st

TIP35AB
TIP35AB

TIP35A/35B/35C TIP36A/36B/36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n TIP35B, TIP35C, TIP36B, AND TIP36C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP35A, TIP35B and TIP35C are silicon epitaxial-base NPN transistors in TO-218 plastic 3 package. They are intented for use in power 2 amplifier and switching applications. 1 The complementary PNP types are TIP36A, T

 5.5. tip35c tip36c tip36b.pdf Size:43K _st

TIP35AB
TIP35AB

TIP35C TIP36B/TIP36C ® COMPLEMENTARY SILICON HIGH POWER TRANSISTORS STMicroelectronic PREFERRED SALESTYPES DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. 3 The complementary PNP type is TIP36C. 2 Also TIP36B is a PNP type. 1 TO-218 INTERNAL SCHEMATIC DI

5.6. tip35c tip36c.pdf Size:194K _st

TIP35AB
TIP35AB

TIP35C TIP36C Complementary power transistors . Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose 3 2 ■ Audio amplifier 1 TO-247 Description The devices are manufactured in planar Figure 1. Internal schematic diagrams technology with “base island” layout. The resulting transistors show excep

5.7. tip35c.pdf Size:138K _utc

TIP35AB
TIP35AB

UNISONIC TECHNOLOGIES CO., LTD TIP35C NPN SILICON TRANSISTOR HIGH POWER TRANSISTORS  DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.  INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3)  ORDERING INFORMATION Order Number Pin Assignment Package Packing Lea

5.8. tip35-a-b-c.pdf Size:86K _bourns

TIP35AB
TIP35AB

TIP35, TIP35A, TIP35B, TIP35C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the SOT-93 PACKAGE TIP36 Series (TOP VIEW) ● 125 W at 25°C Case Temperature B 1 ● 25 A Continuous Collector Current C 2 ● 40 A Peak Collector Current ● Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute max

5.9. tip35 tip36.pdf Size:154K _mospec

TIP35AB
TIP35AB

A A A

5.10. tip35f tip36.pdf Size:67K _cdil

TIP35AB
TIP35AB

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP35F, AF, BF, CF NPN TIP36F, AF, BF, CF PNP TO- 3PF Fully Isolated Plastic Package B C E For General Purpose Power Amplifier and Switching Applications. ABSOLUTE MAXIMUM RATINGS TIP35F TIP35AF TIP35BF TIP35CF DESCRIPTION SYMBOL UNIT TIP36F TIP36AF TIP36BF TIP36CF VCEO

5.11. tip35ca.pdf Size:440K _kec

TIP35AB
TIP35AB

SEMICONDUCTOR TIP35CA TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B N FEATURES O K Recommended for 75W Audio Frequency DIM MILLIMETERS Amplifier Output Stage. _ A + 15.60 0.20 _ B 4.80 + 0.20 Complementary to TIP36CA. _ C 19.90 + 0.20 _ D 2.00 0.20 + Icmax:25A. _ d + 1.00 0.20 _ E + 3.00 0.20 _ F 3.80 + 0.20 D _ G 3.50 +

5.12. tip35c.pdf Size:289K _kec

TIP35AB
TIP35AB

SEMICONDUCTOR TIP35C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to TIP36C. A 15.9 MAX B 4.8 MAX Icmax:25A. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIMUM RATING (Ta=25 ) I 4.5 P PT J 2.0

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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