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TIP36AT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TIP36AT
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de transistor bipolar TIP36AT

 

TIP36AT Datasheet (PDF)

 ..1. Size:216K  inchange semiconductor
tip36at.pdf pdf_icon

TIP36AT

isc Silicon PNP Power Transistor TIP36AT DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 8.1. Size:260K  onsemi
tip35a tip35b tip35c tip36a tip36b tip36c.pdf pdf_icon

TIP36AT

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors http //onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON 25 A Collector Current POWER TRANSISTORS Low Leakage Current - 60-100 VOLTS, 125 WATTS ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain

 8.2. Size:215K  inchange semiconductor
tip36ab.pdf pdf_icon

TIP36AT

isc Silicon PNP Power Transistor TIP36AB DESCRIPTION DC Current Gain- h = 25(Min)@I = -1.5A FE C Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

 8.3. Size:141K  inchange semiconductor
tip36 tip36a tip36b tip36c.pdf pdf_icon

TIP36AT

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION With TO-3PN package Complement to type TIP35/35A/35B/35C DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

Otros transistores... MJE15037 , MJF13005 , QM5HG-24 , S2530A , TIP127B , TIP35AB , TIP35AT , TIP36AB , D965 , UM8168L , SS8550-L , SS8550-H , SS8550-J , 2T837B , 2T837V , 2T837G , 2T837D .

 

 
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