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TIP36AT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP36AT

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 15

Empaquetado / Estuche: TO-220

Búsqueda de reemplazo de transistor bipolar TIP36AT

 

TIP36AT Datasheet (PDF)

1.1. tip36at.pdf Size:216K _inchange_semiconductor

TIP36AT
TIP36AT

isc Silicon PNP Power Transistor TIP36AT DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a

4.1. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi

TIP36AT
TIP36AT

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125

4.2. tip36 tip36a tip36b tip36c.pdf Size:141K _inchange_semiconductor

TIP36AT
TIP36AT

Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION ·With TO-3PN package ·Complement to type TIP35/35A/35B/35C ·DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

 4.3. tip36ab.pdf Size:215K _inchange_semiconductor

TIP36AT
TIP36AT

isc Silicon PNP Power Transistor TIP36AB DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a

4.4. tip36a.pdf Size:221K _inchange_semiconductor

TIP36AT
TIP36AT

isc Silicon PNP Power Transistor TIP36A DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Complement to Type TIP35A ·Current Gain-Bandwidth Product- : f = 3.0MHz(Min)@I = -1.0A T C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in gen

 4.5. tip36af.pdf Size:225K _inchange_semiconductor

TIP36AT
TIP36AT

isc Silicon PNP Power Transistor TIP36AF DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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