TIP36AT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TIP36AT
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 25 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Empaquetado / Estuche: TO-220
Búsqueda de reemplazo de transistor bipolar TIP36AT
TIP36AT Datasheet (PDF)
1.1. tip36at.pdf 
Size:216K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP36AT DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
4.1. tip35a tip35b tip35c tip36a tip36b tip36c.pdf Size:80K _onsemi
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com Designed for general-purpose power amplifier and switching applications. 25 AMPERE Features COMPLEMENTARY SILICON • 25 A Collector Current POWER TRANSISTORS • Low Leakage Current - 60-100 VOLTS, 125
4.2. tip36 tip36a tip36b tip36c.pdf Size:141K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors TIP36/36A/36B/36C DESCRIPTION ·With TO-3PN package ·Complement to type TIP35/35A/35B/35C ·DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base
4.3. tip36ab.pdf Size:215K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP36AB DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
4.4. tip36a.pdf Size:221K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP36A DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Complement to Type TIP35A ·Current Gain-Bandwidth Product- : f = 3.0MHz(Min)@I = -1.0A T C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in gen
4.5. tip36af.pdf Size:225K _inchange_semiconductor
isc Silicon PNP Power Transistor TIP36AF DESCRIPTION ·DC Current Gain- : h = 25(Min)@I = -1.5A FE C ·Collector-Emitter Sustaining Voltage- : V = -60V(Min) CEO(SUS) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25℃) a
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
