HLD128D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HLD128D  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de HLD128D

- Selecciónⓘ de transistores por parámetros

 

HLD128D datasheet

 ..1. Size:269K  1
 hld128d.pdf pdf_icon

HLD128D

220V 220V SERIES TRAN SISTORS HLD128D ROHS FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA ROHS COMPLIA APPLICATION FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER Tc 25 Tc 25 Absolute Maximum Ratings Tc 25

 9.1. Size:1675K  vishay
 irld120 sihld120.pdf pdf_icon

HLD128D

IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single

 9.2. Size:1677K  vishay
 irld120pbf sihld120.pdf pdf_icon

HLD128D

IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single

Otros transistores... 2T837D, 2T837E, 9014M-B, 9014M-C, 9014M-D, 9015M-B, 9015M-C, 9015M-D, S9018, LM4158D, ST2310HI, ST2310DHI, 3DD13005MD-O-HF-N-B, 3DD13005MD-O-Z-N-C, Q3-2, YZ21D, 3DD1555