HLD128D Todos los transistores

 

HLD128D Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HLD128D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar HLD128D

 

Principales características: HLD128D

 ..1. Size:269K  1
 hld128d.pdf pdf_icon

HLD128D

220V 220V SERIES TRAN SISTORS HLD128D ROHS FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA ROHS COMPLIA APPLICATION FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER Tc 25 Tc 25 Absolute Maximum Ratings Tc 25

 9.1. Size:1675K  vishay
 irld120 sihld120.pdf pdf_icon

HLD128D

IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single

 9.2. Size:1677K  vishay
 irld120pbf sihld120.pdf pdf_icon

HLD128D

IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single

Otros transistores... 2T837D , 2T837E , 9014M-B , 9014M-C , 9014M-D , 9015M-B , 9015M-C , 9015M-D , S9018 , LM4158D , ST2310HI , ST2310DHI , 3DD13005MD-O-HF-N-B , 3DD13005MD-O-Z-N-C , Q3-2 , YZ21D , 3DD1555 .

 

 
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