All Transistors. HLD128D Datasheet

 

HLD128D Datasheet, Equivalent, Cross Reference Search

Type Designator: HLD128D

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO220

HLD128D Transistor Equivalent Substitute - Cross-Reference Search

 

HLD128D Datasheet (PDF)

0.1. hld128d.pdf Size:269K _1

HLD128D
HLD128D

220V 220V SERIES TRAN SISTORS HLD128D ROHS FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA ROHS COMPLIA APPLICATION FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER Tc 25 Tc 25 Absolute Maximum Ratings Tc 25

9.1. irld120pbf sihld120.pdf Size:1677K _vishay

HLD128D
HLD128D

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single

9.2. irld120 sihld120.pdf Size:1675K _vishay

HLD128D
HLD128D

IRLD120, SiHLD120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.27RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 12 End StackableQgs (nC) 3.0 Logic-Level Gate DriveQgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 VConfiguration Single

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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