HLD128D Specs and Replacement
Type Designator: HLD128D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO220
HLD128D Substitution
HLD128D datasheet
hld128d.pdf
220V 220V SERIES TRAN SISTORS HLD128D ROHS FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA ROHS COMPLIA APPLICATION FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER Tc 25 Tc 25 Absolute Maximum Ratings Tc 25 ... See More ⇒
irld120 sihld120.pdf
IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single ... See More ⇒
irld120pbf sihld120.pdf
IRLD120, SiHLD120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 5.0 V 0.27 RoHS* For Automatic Insertion COMPLIANT Qg (Max.) (nC) 12 End Stackable Qgs (nC) 3.0 Logic-Level Gate Drive Qgd (nC) 7.1 RDS(on) Specified at VGS = 4 V and 5 V Configuration Single ... See More ⇒
Detailed specifications: 2T837D , 2T837E , 9014M-B , 9014M-C , 9014M-D , 9015M-B , 9015M-C , 9015M-D , S9018 , LM4158D , ST2310HI , ST2310DHI , 3DD13005MD-O-HF-N-B , 3DD13005MD-O-Z-N-C , Q3-2 , YZ21D , 3DD1555 .
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