2SD1047-247 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1047-247
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 140 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Empaquetado / Estuche: TO247
Búsqueda de reemplazo de transistor bipolar 2SD1047-247
2SD1047-247 Datasheet (PDF)
..1. 2sd1047-247.pdf 
Size:360K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage ap
7.1. 2sd1047 2sd1047e.pdf Size:125K _sanyo
Ordering number:680FPNP Epitaxial Planar Silicon TransistorsNPN Triple Diffused Planar Silicon Transistors2SB817/2SD1047140V/12A AF 60W Output ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817/2SD1047] Wide ASO because of on-chip ballast re
7.2. 2sb817p 2sd1047p 2sd1047p.pdf Size:30K _sanyo
Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P
7.3. 2sb817c 2sd1047c.pdf Size:445K _sanken-ele
Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0
7.4. 2sd1047e.pdf Size:206K _inchange_semiconductor
isc Product Specificationisc Silicon NPN Power Transistor 2SD1047EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817EMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for audio frequency a
7.5. 2sd1047.pdf Size:218K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage a
Otros transistores... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .
