2SD1047-247 - описание и поиск аналогов

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage ap

2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line

Ordering number ENN6572 2SB817P / 2SD1047P 2SB817P PNP Epitaxial Planar Silicon Transistor 2SD1047P NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P

Ordering number 680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast re

Ordering number ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 APPLICATIONS Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency a

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage a