KSE350J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor KSE350JDESCRIPTIONHigh Collector-Emitter breakdown voltageLow Collector Saturation VoltageComplement to Type KSE340J100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage general purpose applicationsSuitable for transformABSOLUTE MAXIMUM RATINGS(T =25)

KSE350High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE340TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V

KSE350 PNP EPITAXIAL SILICON TRANSISTORHIGH COLLECTOR-EMITTERTO-126SUSTAINING VOLTAGEHIGH VOLTAGE GENERAL PURPOSEAPPLICATIONSSUITABLE FOR TRANSFORMERComplement to KSE340ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter- Base Voltage VEBO -5 V Collector Current IC -500 mA Collect

HIGH VOLTAGE COMPLEMENT TRANSISTORS RKSE340 KSE350 APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS RoHS pro

isc Silicon PNP Power Transistor KSE350DESCRIPTIONHigh Collector-Emitter breakdown voltageLow Collector Saturation VoltageComplement to Type KSE340Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage general purpose applicationsSuitable for transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE