KSE350J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSE350J
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 260 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Empaquetado / Estuche: TO126
Búsqueda de reemplazo de transistor bipolar KSE350J
KSE350J Datasheet (PDF)
..1. kse350j.pdf 
Size:201K _inchange_semiconductor
isc Silicon PNP Power Transistor KSE350JDESCRIPTIONHigh Collector-Emitter breakdown voltageLow Collector Saturation VoltageComplement to Type KSE340J100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage general purpose applicationsSuitable for transformABSOLUTE MAXIMUM RATINGS(T =25)
8.1. kse350.pdf Size:37K _fairchild_semi
KSE350High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE340TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V
8.2. kse350.pdf Size:44K _samsung
KSE350 PNP EPITAXIAL SILICON TRANSISTORHIGH COLLECTOR-EMITTERTO-126SUSTAINING VOLTAGEHIGH VOLTAGE GENERAL PURPOSEAPPLICATIONSSUITABLE FOR TRANSFORMERComplement to KSE340ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter- Base Voltage VEBO -5 V Collector Current IC -500 mA Collect
Otros transistores... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , D882 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .
