KSE350J . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor KSE350J DESCRIPTION High Collector-Emitter breakdown voltage Low Collector Saturation Voltage Complement to Type KSE340J 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage general purpose applications Suitable for transform ABSOLUTE MAXIMUM RATINGS(T =25 )

KSE350 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE340 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V

KSE350 PNP EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITTER TO-126 SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complement to KSE340 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter- Base Voltage VEBO -5 V Collector Current IC -500 mA Collect

HIGH VOLTAGE COMPLEMENT TRANSISTORS R KSE340 KSE350 APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS RoHS pro

isc Silicon PNP Power Transistor KSE350 DESCRIPTION High Collector-Emitter breakdown voltage Low Collector Saturation Voltage Complement to Type KSE340 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage general purpose applications Suitable for transform ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE