ISCN372N
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ISCN372N
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 700
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO3P
Búsqueda de reemplazo de transistor bipolar ISCN372N
ISCN372N
Datasheet (PDF)
..1. Size:252K inchange semiconductor
iscn372n.pdf
isc Silicon NPN Power Transistor ISCN372NDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
7.1. Size:228K inchange semiconductor
iscn372m.pdf
isc Silicon NPN Power Transistor ISCN372MDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
9.1. Size:260K inchange semiconductor
iscn341n.pdf
isc Silicon NPN Power Transistors ISCN341NDESCRIPTIONCollector-Emitter Sustaining Voltage: V = 450V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 720 VCBOV Collector-Emitter Voltage 450 VCEO
9.2. Size:251K inchange semiconductor
iscn366p.pdf
isc Silicon NPN Power Transistor ISCN366PDESCRIPTIONDC Current Gain-: h = 20-60@I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.