ISCN372N Todos los transistores

 

ISCN372N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ISCN372N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 70 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3P
 

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ISCN372N Datasheet (PDF)

 ..1. Size:252K  inchange semiconductor
 iscn372n.pdf pdf_icon

ISCN372N

isc Silicon NPN Power Transistor ISCN372NDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 7.1. Size:228K  inchange semiconductor
 iscn372m.pdf pdf_icon

ISCN372N

isc Silicon NPN Power Transistor ISCN372MDESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 9.1. Size:260K  inchange semiconductor
 iscn341n.pdf pdf_icon

ISCN372N

isc Silicon NPN Power Transistors ISCN341NDESCRIPTIONCollector-Emitter Sustaining Voltage: V = 450V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 720 VCBOV Collector-Emitter Voltage 450 VCEO

 9.2. Size:251K  inchange semiconductor
 iscn366p.pdf pdf_icon

ISCN372N

isc Silicon NPN Power Transistor ISCN366PDESCRIPTIONDC Current Gain-: h = 20-60@I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)a

MOSTRAR MÁS

Otros transistores... KSE350J , KSH13005 , 2SC3866A , 3DK501D , 3DA77 , 3DF5B , ISCN366P , ISCN372M , S9014 , SSCP005GSB , SJT13009NT , 2N5401B , 2N5401B-Y1 , 2N5401B-Y2 , 2N5551A , 2N5551A-Y1 , 2N5551A-Y2 .

 

 
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