ISCN372N - аналоги, параметры транзистора - Справочник транзисторов

ISCN372N - технические параметры

..1. Size:252K inchange semiconductor
iscn372n.pdf pdf_icon

isc Silicon NPN Power Transistor ISCN372N DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

7.1. Size:228K inchange semiconductor
iscn372m.pdf pdf_icon

isc Silicon NPN Power Transistor ISCN372M DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

9.1. Size:260K inchange semiconductor
iscn341n.pdf pdf_icon

isc Silicon NPN Power Transistors ISCN341N DESCRIPTION Collector-Emitter Sustaining Voltage V = 450V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 720 V CBO V Collector-Emitter Voltage 450 V CEO

9.2. Size:251K inchange semiconductor
iscn366p.pdf pdf_icon

isc Silicon NPN Power Transistor ISCN366P DESCRIPTION DC Current Gain- h = 20-60@I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a

Другие транзисторы... KSE350J , KSH13005 , 2SC3866A , 3DK501D , 3DA77 , 3DF5B , ISCN366P , ISCN372M , 2SC2073 , SSCP005GSB , SJT13009NT , 2N5401B , 2N5401B-Y1 , 2N5401B-Y2 , 2N5551A , 2N5551A-Y1 , 2N5551A-Y2 .