C9012B-F
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C9012B-F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 96
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar C9012B-F
C9012B-F
Datasheet (PDF)
8.1. Size:318K feihonltd
c9012b.pdf
TRANSISTOR C9012B MAIN CHARACTERISTICS FEATURES IC -500mA Epitaxial silicon VCEO - 20V High switching speed PC 625mW C9013B Complementary to C9013B RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier
9.1. Size:360K kec
ktc9012.pdf
SEMICONDUCTOR KTC9012TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.Complementary to KTC9013.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25)F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBO -40
9.2. Size:353K kec
ktc9012s.pdf
SEMICONDUCTOR KTC9012STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Excellent hFE Linearity.+A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9013S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)
9.3. Size:613K kec
ktc9012sc.pdf
SEMICONDUCTOR KTC9012SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESExcellent hFE Linearity.Complementary to KTC9013SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -500 mA
9.4. Size:96K first silicon
ftc9012s.pdf
SEMICONDUCTORFTC9012STECHNICAL DATAXGeneral Purpose TransistorsPNP SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9012SX SOT 23 FTC9012SX10000/Tape&ReelSOT-233COLLECTOR1MAXIMUM RATINGS BASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 2
9.5. Size:302K feihonltd
c9012a.pdf
TRANSISTOR C9012A MAIN CHARACTERISTICS FEATURES IC -100mA Epitaxial silicon VCEO - 20V High switching speed PC 450mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power
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