FC1407 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FC1407  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 16 V

Tensión colector-emisor (Vce): 8 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8000 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT323

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FC1407 datasheet

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FC1407

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PD - 93776 IRFC1404 HEXFET Power MOSFET Die in Wafer Form D 40V Size 4.0 RDS(on)=0.0029 G 6" Wafer S Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (Min/Max) Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40V Min. VGS = 0V, ID = 250 A RDS(on) Static Drain-to-Source On-Resistance 2.9m Max. VGS = 10V, ID = 45A VGS(th) Gate Threshold Vol

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FC1407

Ordering number EN3361 FC140 NPN Epitaxial Planar Silicon Composite Transistor High-Speed Switching Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2074 ing efficiency greatly. [FC140] Small output capacitance, high gain-bandwidth product. The FC140 is formed with two c

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FC1407

MOSTRAR MÁS

Otros transistores... S8550MG-B, S8550MG-C, S8550MG-D, FD965S, FS13001, FC1404, FC1405, FC1406, A42, FC3355, FC3356, FC3356G, FC3357A, FC3357B, FC3357C, FC3357D, FC3585A