FC1407 Datasheet. Specs and Replacement
Type Designator: FC1407 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 16 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT323
FC1407 Substitution
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FC1407 datasheet
FC1407 NPN SILICON RF TRANSISTOR FC1047 NPN SOT-323 4GHz S21e 2 ... See More ⇒
PD - 93776 IRFC1404 HEXFET Power MOSFET Die in Wafer Form D 40V Size 4.0 RDS(on)=0.0029 G 6" Wafer S Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (Min/Max) Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40V Min. VGS = 0V, ID = 250 A RDS(on) Static Drain-to-Source On-Resistance 2.9m Max. VGS = 10V, ID = 45A VGS(th) Gate Threshold Vol... See More ⇒
Ordering number EN3361 FC140 NPN Epitaxial Planar Silicon Composite Transistor High-Speed Switching Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2074 ing efficiency greatly. [FC140] Small output capacitance, high gain-bandwidth product. The FC140 is formed with two c... See More ⇒
Detailed specifications: S8550MG-B, S8550MG-C, S8550MG-D, FD965S, FS13001, FC1404, FC1405, FC1406, A42, FC3355, FC3356, FC3356G, FC3357A, FC3357B, FC3357C, FC3357D, FC3585A
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