FC1407 Datasheet and Replacement
Type Designator: FC1407
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 16 V
Maximum Collector-Emitter Voltage |Vce|: 8 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8000 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT323
FC1407 Substitution
FC1407 Datasheet (PDF)
fc1407.pdf

FC1407NPN SILICON RF TRANSISTORFC1047 NPN SOT-323 4GHz :S21e2
irfc1404.pdf

PD - 93776IRFC1404HEXFET Power MOSFET Die in Wafer FormD40VSize 4.0RDS(on)=0.0029G6" WaferSElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (Min/Max) Test ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 40V Min. VGS = 0V, ID = 250ARDS(on) Static Drain-to-Source On-Resistance 2.9m Max. VGS = 10V, ID = 45AVGS(th) Gate Threshold Vol
fc140.pdf

Ordering number:EN3361FC140NPN Epitaxial Planar Silicon Composite TransistorHigh-Speed Switching ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2074ing efficiency greatly.[FC140] Small output capacitance, high gain-bandwidthproduct. The FC140 is formed with two c
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA1973 | BF194A | HA5001 | 2SD27
Keywords - FC1407 transistor datasheet
FC1407 cross reference
FC1407 equivalent finder
FC1407 lookup
FC1407 substitution
FC1407 replacement
History: 2SA1973 | BF194A | HA5001 | 2SD27



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