FC1407 Datasheet, Equivalent, Cross Reference Search

   Type Designator: FC1407
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 16 V
   Maximum Collector-Emitter Voltage |Vce|: 8 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT323

FC1407 Transistor Equivalent Substitute - Cross-Reference Search

FC1407 Datasheet (PDF)

..1. Size:264K cn guoxin jiapin
fc1407.pdf

FC1407NPN SILICON RF TRANSISTORFC1047 NPN SOT-323 4GHz :S21e2

9.1. Size:24K international rectifier
irfc1404.pdf

PD - 93776IRFC1404HEXFET Power MOSFET Die in Wafer FormD40VSize 4.0RDS(on)=0.0029G6" WaferSElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (Min/Max) Test ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 40V Min. VGS = 0V, ID = 250ARDS(on) Static Drain-to-Source On-Resistance 2.9m Max. VGS = 10V, ID = 45AVGS(th) Gate Threshold Vol

9.2. Size:128K sanyo
fc140.pdf

Ordering number:EN3361FC140NPN Epitaxial Planar Silicon Composite TransistorHigh-Speed Switching ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2074ing efficiency greatly.[FC140] Small output capacitance, high gain-bandwidthproduct. The FC140 is formed with two c

9.3. Size:1886K cn guoxin jiapin
fc1406.pdf