BC847PNQ . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BC847PNQ COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT363 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feat

BC 847PNNPN/PNP Silicon AF Transistor Array For AF input stages and driver applivations High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one packageTape loading orientationPIN ConfigurationNPN-Transistor 1 = E 2 = B 6 = C PNP-Transistor 4 = E 5 = B 3 = C Type Marking Ordering Code PackageBC 847

BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Die Construction Case: SOT363 Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface

BC846PN/UPN_BC847PNNPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101BC846PNBC846UPNBC847PNC1 B2 E26 5 4TR2TR11 2 3E1 B1 C2EHA

BC847PNFeatures Ultra-Small Surface Mount Package Halogen Free. Green Device (Note 1)NPN/PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise Specified Operating Jun

BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power DissipationPCM : 0.2 W (Temp. = 25C) Collector CurrentICM : 0.1A Collector-base VoltageV(BR)CBO : 50/-50 V Operating & Storage Junction Tem

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsDUAL TRANSISTOR (NPN+PNP) BC847PNSOT-363 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W) Transistors in one packageMAKING: 7P MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector

BC847PN Complementary Transistor(PNP and NPN)SOT-363Features Epitaxial Die Construction Two internal isolated NPN/PNP Transistors in one package MAKING: 7P Dimensions in inches and (millimeters)MAXIMUM RATINGS TR1 (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base V

RoHS COMPLIANT BC847PNDual NPN+PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN/PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: 7P Equivalent circuit Ordering Information

Plastic-Encapsulate TransistorsDUAL TRANSISTOR (NPN+PNP) SOT-363 FEATURES Epitaxial Die Construction (BC847W+BC857W) Two isolated NPN/PNP Transistors in one packageMAKING: 7P MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collecto