BC847PNQ Datasheet. Specs and Replacement
Type Designator: BC847PNQ 📄📄
SMD Transistor Code: K7P
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT363
- BJT ⓘ Cross-Reference Search
BC847PNQ datasheet
..1. Size:485K diodes
bc847pnq.pdf 

BC847PNQ COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case SOT363 stringent requirements of Automotive Applications. Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity Level 1 per J-STD-020 Feat... See More ⇒
7.1. Size:166K siemens
bc847pn.pdf 

BC 847PN NPN/PNP Silicon AF Transistor Array For AF input stages and driver applivations High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation PIN Configuration NPN-Transistor 1 = E 2 = B 6 = C PNP-Transistor 4 = E 5 = B 3 = C Type Marking Ordering Code Package BC 847... See More ⇒
7.2. Size:453K diodes
bc847pn.pdf 

BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Die Construction Case SOT363 Two Internally Isolated NPN/PNP Transistors in One Package Case Material Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface ... See More ⇒
7.3. Size:848K infineon
bc846pn bc846upn bc847pn.pdf 

BC846PN/UPN_BC847PN NPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 BC846PN BC846UPN BC847PN C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA... See More ⇒
7.4. Size:1297K mcc
bc847pn.pdf 

BC847PN Features Ultra-Small Surface Mount Package Halogen Free. Green Device (Note 1) NPN/PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Small Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Operating Jun... See More ⇒
7.5. Size:693K secos
bc847pn.pdf 

BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM 0.2 W (Temp. = 25 C) Collector Current ICM 0.1A Collector-base Voltage V(BR)CBO 50/-50 V Operating & Storage Junction Tem... See More ⇒
7.6. Size:1402K jiangsu
bc847pn.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) BC847PN SOT-363 FEATURES Epitaxial Die Construction Two isolated NPN/PNP(BC847W+BC857W) Transistors in one package MAKING 7P MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector... See More ⇒
7.7. Size:237K lge
bc847pn.pdf 

BC847PN Complementary Transistor(PNP and NPN) SOT-363 Features Epitaxial Die Construction Two internal isolated NPN/PNP Transistors in one package MAKING 7P Dimensions in inches and (millimeters) MAXIMUM RATINGS TR1 (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base V... See More ⇒
7.8. Size:426K cn yangzhou yangjie elec
bc847pn.pdf 

RoHS COMPLIANT BC847PN Dual NPN+PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN/PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking 7P Equivalent circuit Ordering Information... See More ⇒
7.9. Size:1802K cn cbi
bc847pn.pdf 

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) SOT-363 FEATURES Epitaxial Die Construction (BC847W+BC857W) Two isolated NPN/PNP Transistors in one package MAKING 7P MAXIMUM RATINGS TR1 (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collecto... See More ⇒
Detailed specifications: AC847CWQ, AC857BQ, AC857CQ, AC857CWQ, APT13003H, BC817-16Q, BC817-25Q, BC817-40Q, 2SD1047, BCP51TA, BCP5110TA, BCP5116TA, BCP5116TC, BCP52TA, BCP5210TA, BCP5216TA, BCP53TA
Keywords - BC847PNQ pdf specs
BC847PNQ cross reference
BC847PNQ equivalent finder
BC847PNQ pdf lookup
BC847PNQ substitution
BC847PNQ replacement