BFP450 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP450

Código: AN*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 4.5 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.17 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 18000 MHz

Capacitancia de salida (Cc): 0.48 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT343

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BFP450 datasheet

 ..1. Size:66K  siemens
 bfp450.pdf pdf_icon

BFP450

SIEGET 25 BFP450 NPN Silicon RF Transistor For Medium Power Amplifiers Compression Point P-1dB = +19 dBm at 1.8 GHz Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability SIEGET 25-Line Siemens Grounded Emitter Transistor- 25 GHz fT-Line ESD Electrostatic discharge sens

 ..2. Size:522K  infineon
 bfp450.pdf pdf_icon

BFP450

BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Product description The BFP450 is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency fT of 24 GHz, collector design and high linearity characteristics make the device suitable for energy eff

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