BFP450 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP450
Código: AN*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 4.5 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.17 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 18000 MHz
Capacitancia de salida (Cc): 0.48 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT343
Búsqueda de reemplazo de transistor bipolar BFP450
BFP450 Datasheet (PDF)
bfp450.pdf
SIEGET25 BFP450NPN Silicon RF Transistor For Medium Power AmplifiersCompression Point P-1dB = +19 dBm at 1.8 GHzMaximum Available Gain Gma = 14 dB at 1.8 GHzNoise Figure F = 1.25 dB at 1.8 GHzTransition Frequency fT = 24 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sens
bfp450.pdf
BFP450Surface mount high linearity wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP450 is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 24 GHz, collector design and high linearity characteristics make thedevice suitable for energy eff
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
