All Transistors. BFP450 Datasheet

 

BFP450 Datasheet and Replacement


   Type Designator: BFP450
   SMD Transistor Code: AN*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 4.5 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.17 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 18000 MHz
   Collector Capacitance (Cc): 0.48 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT343
 

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BFP450 Datasheet (PDF)

 ..1. Size:66K  siemens
 bfp450.pdf pdf_icon

BFP450

SIEGET25 BFP450NPN Silicon RF Transistor For Medium Power AmplifiersCompression Point P-1dB = +19 dBm at 1.8 GHzMaximum Available Gain Gma = 14 dB at 1.8 GHzNoise Figure F = 1.25 dB at 1.8 GHzTransition Frequency fT = 24 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sens

 ..2. Size:522K  infineon
 bfp450.pdf pdf_icon

BFP450

BFP450Surface mount high linearity wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP450 is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 24 GHz, collector design and high linearity characteristics make thedevice suitable for energy eff

Datasheet: BFP182W , BFP183W , BFP193W , BFP196 , BFP405 , BFP405F , BFP410 , BFP420 , MJE340 , BFP520F , BFP540 , BFP540ESD , BFP540FESD , BFP640 , BFP640ESD , BFP650 , BFP650F .

History: GT806B | KT877B

Keywords - BFP450 transistor datasheet

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