BFP450 Datasheet. Specs and Replacement

Type Designator: BFP450

SMD Transistor Code: AN*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 4.5 V

Maximum Emitter-Base Voltage |Veb|: 1.5 V

Maximum Collector Current |Ic max|: 0.17 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 18000 MHz

Collector Capacitance (Cc): 0.48 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT343

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BFP450 datasheet

 ..1. Size:66K  siemens

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BFP450

SIEGET 25 BFP450 NPN Silicon RF Transistor For Medium Power Amplifiers Compression Point P-1dB = +19 dBm at 1.8 GHz Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability SIEGET 25-Line Siemens Grounded Emitter Transistor- 25 GHz fT-Line ESD Electrostatic discharge sens... See More ⇒

 ..2. Size:522K  infineon

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BFP450

BFP450 Surface mount high linearity wideband silicon NPN RF bipolar transistor Product description The BFP450 is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency fT of 24 GHz, collector design and high linearity characteristics make the device suitable for energy eff... See More ⇒

Detailed specifications: BFP182W, BFP183W, BFP193W, BFP196, BFP405, BFP405F, BFP410, BFP420, 2SC4793, BFP520F, BFP540, BFP540ESD, BFP540FESD, BFP640, BFP640ESD, BFP650, BFP650F

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