BFP450 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP450
SMD Transistor Code: AN*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 4.5 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.17 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 18000 MHz
Collector Capacitance (Cc): 0.48 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT343
BFP450 Transistor Equivalent Substitute - Cross-Reference Search
BFP450 Datasheet (PDF)
bfp450.pdf
SIEGET25 BFP450NPN Silicon RF Transistor For Medium Power AmplifiersCompression Point P-1dB = +19 dBm at 1.8 GHzMaximum Available Gain Gma = 14 dB at 1.8 GHzNoise Figure F = 1.25 dB at 1.8 GHzTransition Frequency fT = 24 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sens
bfp450.pdf
BFP450Surface mount high linearity wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP450 is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 24 GHz, collector design and high linearity characteristics make thedevice suitable for energy eff
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
