SIEGET25 BFP450NPN Silicon RF Transistor For Medium Power AmplifiersCompression Point P-1dB = +19 dBm at 1.8 GHzMaximum Available Gain Gma = 14 dB at 1.8 GHzNoise Figure F = 1.25 dB at 1.8 GHzTransition Frequency fT = 24 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sens

BFP450Surface mount high linearity wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP450 is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 24 GHz, collector design and high linearity characteristics make thedevice suitable for energy eff