BFP520F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP520F
Código: AP*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.12 W
Tensión colector-base (Vcb): 10 V
Tensión colector-emisor (Vce): 2.5 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 32000 MHz
Capacitancia de salida (Cc): 0.07 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TSFP4-1
Búsqueda de reemplazo de transistor bipolar BFP520F
BFP520F Datasheet (PDF)
bfp520f.pdf
BFP520FLow profile high gain silicon NPN RF bipolar transistorProduct descriptionThe BFP520F is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fifth generation RF bipolar transistor family. Its transitionfrequency fT of 45 GHz, high gain and low noise make the device suitable for applicationsup to 15 GHz. It remains cost competitiv
bfp520.pdf
SIEGET 45BFP 520NPN Silicon RF TransistorPreliminary data3 For highest gain low noise amplifier4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
