All Transistors. BFP520F Datasheet

 

BFP520F Datasheet and Replacement


   Type Designator: BFP520F
   SMD Transistor Code: AP*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.12 W
   Maximum Collector-Base Voltage |Vcb|: 10 V
   Maximum Collector-Emitter Voltage |Vce|: 2.5 V
   Maximum Emitter-Base Voltage |Veb|: 1 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 32000 MHz
   Collector Capacitance (Cc): 0.07 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TSFP4-1
 

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BFP520F Datasheet (PDF)

 ..1. Size:224K  infineon
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BFP520F

BFP520FLow profile high gain silicon NPN RF bipolar transistorProduct descriptionThe BFP520F is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fifth generation RF bipolar transistor family. Its transitionfrequency fT of 45 GHz, high gain and low noise make the device suitable for applicationsup to 15 GHz. It remains cost competitiv

 8.1. Size:48K  siemens
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BFP520F

SIEGET 45BFP 520NPN Silicon RF TransistorPreliminary data3 For highest gain low noise amplifier4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz

Datasheet: BFP183W , BFP193W , BFP196 , BFP405 , BFP405F , BFP410 , BFP420 , BFP450 , 2SA1837 , BFP540 , BFP540ESD , BFP540FESD , BFP640 , BFP640ESD , BFP650 , BFP650F , BFP720 .

History: 2SC1206 | BF423P3 | BFR94 | NST857BDP6T5G | SBC817-16L | 2SC5488A | FHT9015L-ME

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