BFP650 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP650

Código: R5*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 13 V

Tensión colector-emisor (Vce): 4 V

Tensión emisor-base (Veb): 1.2 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 31000 MHz

Capacitancia de salida (Cc): 0.26 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT343

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BFP650 datasheet

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BFP650

BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or character

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BFP650

BFP650F Low profile linear silicon NPN RF bipolar transistor Product description The BFP650F is a RF bipolar transistor based on SiGe C technology that is part of Infineon s established sixth generation transistor family. Its transition frequency fT of 42 GHz along with its linearity characteristics make the device suitable for oscillators. It remains cost competitive without compromisi

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