BFP650 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP650
Código: R5*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 13 V
Tensión colector-emisor (Vce): 4 V
Tensión emisor-base (Veb): 1.2 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 31000 MHz
Capacitancia de salida (Cc): 0.26 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT343
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BFP650 Datasheet (PDF)
bfp650.pdf
BFP650High Linearity Silicon Germanium Bipolar RF TransistorData SheetRevision 1.1, 2012-09-13RF & Protection DevicesEdition 2012-09-13Published byInfineon Technologies AG81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or character
bfp650f.pdf
BFP650FLow profile linear silicon NPN RF bipolar transistorProduct descriptionThe BFP650F is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its transition frequency fT of42 GHz along with its linearity characteristics make the device suitable for oscillators. Itremains cost competitive without compromisi
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