BFP650 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP650
SMD Transistor Code: R5*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 13 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 1.2 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 31000 MHz
Collector Capacitance (Cc): 0.26 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT343
BFP650 Transistor Equivalent Substitute - Cross-Reference Search
BFP650 Datasheet (PDF)
bfp650.pdf
BFP650High Linearity Silicon Germanium Bipolar RF TransistorData SheetRevision 1.1, 2012-09-13RF & Protection DevicesEdition 2012-09-13Published byInfineon Technologies AG81726 Munich, Germany 2013 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or character
bfp650f.pdf
BFP650FLow profile linear silicon NPN RF bipolar transistorProduct descriptionThe BFP650F is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its transition frequency fT of42 GHz along with its linearity characteristics make the device suitable for oscillators. Itremains cost competitive without compromisi
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
