BFP650 Datasheet. Specs and Replacement

Type Designator: BFP650

SMD Transistor Code: R5*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 13 V

Maximum Collector-Emitter Voltage |Vce|: 4 V

Maximum Emitter-Base Voltage |Veb|: 1.2 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 31000 MHz

Collector Capacitance (Cc): 0.26 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT343

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BFP650 datasheet

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BFP650

BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or character... See More ⇒

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BFP650

BFP650F Low profile linear silicon NPN RF bipolar transistor Product description The BFP650F is a RF bipolar transistor based on SiGe C technology that is part of Infineon s established sixth generation transistor family. Its transition frequency fT of 42 GHz along with its linearity characteristics make the device suitable for oscillators. It remains cost competitive without compromisi... See More ⇒

Detailed specifications: BFP420, BFP450, BFP520F, BFP540, BFP540ESD, BFP540FESD, BFP640, BFP640ESD, BC546, BFP650F, BFP720, BFP720ESD, BFP720F, BFP720FESD, BFP740ESD, BFP740F, BFP740FESD

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