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BFP740ESD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP740ESD

Código: T7*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.16 W

Tensión colector-base (Vcb): 4.9 V

Tensión colector-emisor (Vce): 4.2 V

Corriente del colector DC máxima (Ic): 0.045 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 45000 MHz

Capacitancia de salida (Cc): 0.08 pF

Ganancia de corriente contínua (hfe): 160

Empaquetado / Estuche: SOT343

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BFP740ESD Datasheet (PDF)

..1. bfp740esd.pdf Size:519K _infineon

BFP740ESD BFP740ESD

BFP740ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB

8.1. bfp740f.pdf Size:1510K _infineon

BFP740ESD BFP740ESD

BFP740FLow Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 2.0, 2015-03-12RF & Protection DevicesEdition 2015-03-12Published byInfineon Technologies AG81726 Munich, Germany 2015 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristi

8.2. bfp740fesd.pdf Size:627K _infineon

BFP740ESD BFP740ESD

BFP740FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB

 8.3. bfp740.pdf Size:658K _infineon

BFP740ESD BFP740ESD

BFP740SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mAProduct validationQualified for industrial applications according to the relevant tests

8.4. bfp740.pdf Size:1761K _kexin

BFP740ESD BFP740ESD

SMD Type TransistorsNPN TransistorsBFP740 (KFP740)Uint: mmSOT-3430.9 0.10.22 Features 0.1 MAX.1.30.1 High gain ultra low noise RF transistorA4 3 High maximum stable gain Gold metallization for extra high reliability0.15 150 GHz fT-Silicon Germanium technology1 2+0.1 +0.1 Outstanding noise figure F = 0.5 dB at 1.8 GHz0.30.15

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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