BFP740ESD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP740ESD  📄📄 

Código: T7*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.16 W

Tensión colector-base (Vcb): 4.9 V

Tensión colector-emisor (Vce): 4.2 V

Corriente del colector DC máxima (Ic): 0.045 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 45000 MHz

Capacitancia de salida (Cc): 0.08 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: SOT343

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BFP740ESD datasheet

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BFP740ESD

BFP740ESD SiGe C NPN RF bipolar transistor Product description The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB

 8.1. Size:1510K  infineon
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BFP740ESD

BFP740F Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 2.0, 2015-03-12 RF & Protection Devices Edition 2015-03-12 Published by Infineon Technologies AG 81726 Munich, Germany 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristi

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BFP740ESD

BFP740FESD SiGe C NPN RF bipolar transistor Product description The BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB

 8.3. Size:658K  infineon
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BFP740ESD

BFP740 SiGe C NPN RF bipolar transistor Product description The BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mA Product validation Qualified for industrial applications according to the relevant tests

MOSTRAR MÁS

Otros transistores... BFP640, BFP640ESD, BFP650, BFP650F, BFP720, BFP720ESD, BFP720F, BFP720FESD, 2SD313, BFP740F, BFP740FESD, BFP760, BFP780, BFP840ESD, BFP840FESD, BFP842ESD, BFP843